Testing for MOS IC Failure Modes
- 1 April 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Reliability
- Vol. R-31 (1) , 9-18
- https://doi.org/10.1109/tr.1982.5221212
Abstract
The failure modes of MOS technology are described with emphasis on recent trends in LSI. Failures are classified into short, open, degradation, and soft recoverable errors. The following failure modes are covered: oxide breakdown caused by static discharge and time-dependent effects; metallization failures caused by electromigration or corrosion; threshold voltage shifts caused by ionic contamination, surface-charge spreading, and the hot-electron effect. Special attention is paid to the increasingly important alpha-particle-induced soft errors. Methods by which each of the failure modes can be detected are discussed and tabulated, together with the information on acceleration factors necessary for designing life and screen tests. Of the failure modes cited, threshold shifts due to hot electrons, and soft errors caused by ionizing radiation are likely to be increasingly important as VLSI technology progresses.Keywords
This publication has 47 references indexed in Scilit:
- Defect-Related Breakdown and Conduction in SiO2IBM Journal of Research and Development, 1980
- Test patterns for EPROMsIEEE Journal of Solid-State Circuits, 1979
- MOS semiconductor random access memory failure rateMicroelectronics Reliability, 1979
- Breakdown in silicon oxide−A reviewJournal of Vacuum Science and Technology, 1977
- Endurance and memory decay of MNOS devicesJournal of Applied Physics, 1976
- Failure modes and reliability of dynamic RAMSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976
- Space charge effects in MNOS memory devices and endurance measurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974
- MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTUREApplied Physics Letters, 1971
- On Failure Mechanisms in Large-Scale Integrated CircuitsPublished by Elsevier ,1971