High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1−xGex/Si(100) heterostructures
- 15 February 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (4) , 2119-2123
- https://doi.org/10.1063/1.369512
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- A new model for the (2x1) reconstructed CoSi2-Si(100) interfacePhilosophical Magazine Letters, 1998
- Mechanism for ordering in SiGe films with reconstructed surfaceApplied Physics Letters, 1997
- The stability of ordered structures in SiGe films examined by strain-energy calculationsJournal of Crystal Growth, 1997
- Fabrication of buried epitaxial CoSi2 layer through selective diffusionApplied Physics Letters, 1997
- Growth of epitaxial CoSi2 films on strained Si1 − xGexSi(001) heterostructuresJournal of Crystal Growth, 1996
- Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chainPhilosophical Magazine A, 1994
- Electrical properties of thermal oxides grown over doped polysilicon thin filmsJournal of Vacuum Science & Technology B, 1989
- Epitaxial orientation and morphology of thin CoSi2 films grown on Si(100): Effects of growth parametersJournal of Vacuum Science & Technology A, 1989
- Formation of thin films of CoSi2: Nucleation and diffusion mechanismsThin Solid Films, 1985
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979