Epitaxial growth of Si on GaP(100) and Si(111), monitored by soft X-ray reflection
- 2 May 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 154 (2-3) , 601-613
- https://doi.org/10.1016/0039-6028(85)90051-2
Abstract
No abstract availableKeywords
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