DIBL in short-channel NMOS devices at 77 K

This publication has 10 references indexed in Scilit:

• The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K
  Solid-State Electronics, 1990
• Substrate bias effects on drain-induced barrier lowering in short-channel PMOS devices
  IEEE Transactions on Electron Devices, 1990
• Cryogenic operation of CMOS-based microsystems and computers
  Microprocessors and Microsystems, 1989
• MOS device modeling at 77 K
  IEEE Transactions on Electron Devices, 1989
• Computer-Aided Design and VLSI Device Development
  Published by Springer Nature ,1988
• Submicrometer-channel CMOS for low-temperature operation
  IEEE Transactions on Electron Devices, 1987
• Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance
  Solid-State Electronics, 1986
• Drain-induced barrier-lowering analysis in VSLI MOSFET devices using two-dimensional numerical simulations
  IEEE Transactions on Electron Devices, 1986
• Short-channel effects in MOSFET's at liquid-Nitrogen temperature
  IEEE Transactions on Electron Devices, 1986
• VLSI limitations from drain-induced barrier lowering
  IEEE Transactions on Electron Devices, 1979