Dielectric breakdown of silicon oxide studied by scanning probe microscopy
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 1884-1888
- https://doi.org/10.1116/1.589572
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- High resolution Fowler-Nordheim field emission maps of thin silicon oxide layersApplied Physics Letters, 1996
- Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kineticsApplied Physics Letters, 1995
- Investigations on the correlation between growth rate and gate oxide integrity of Czochralski-grown siliconJournal of Crystal Growth, 1994
- Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopyApplied Physics Letters, 1993
- Generation Mechanism of Dislocations in Local Oxidation of SiliconJournal of the Electrochemical Society, 1980
- Dielectric breakdown in electrically stressed thin films of thermal SiO2Journal of Applied Physics, 1978
- Formation of Silicon Nitride at a Si ‐ SiO2 Interface during Local Oxidation of Silicon and during Heat‐Treatment of Oxidized Silicon in NH 3 GasJournal of the Electrochemical Society, 1976
- Effects of Material and Processing Parameters on the Dielectric Strength of Thermally Grown SiO[sub 2] FilmsJournal of the Electrochemical Society, 1970