The development of non-uniform deposition of holes in gate oxides
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1203-1207
- https://doi.org/10.1109/23.25440
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent BiasesIEEE Transactions on Nuclear Science, 1987
- The Response of MOS Devices to Dose-Enhanced Low-Energy RadiationIEEE Transactions on Nuclear Science, 1986
- Mosfet and MOS Capacitor Responses to Ionizing RadiationIEEE Transactions on Nuclear Science, 1984
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Thermal Annealing of Radiation Induced Defects: A Diffusion-Limited Process?IEEE Transactions on Nuclear Science, 1983
- Gamma-Induced Noise in CCDsIEEE Transactions on Nuclear Science, 1981
- Chord Length Distributions for Circular CylindersRadiation Research, 1980
- Hole Transport and Recovery Characteristics of SiO2 Gate InsulatorsIEEE Transactions on Nuclear Science, 1976
- Ionizing Events in Small Device StructuresIEEE Transactions on Nuclear Science, 1975
- Simple model for the slope change of C‐V curves of irradiated MOS capacitorsJournal of Applied Physics, 1974