Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
- 1 September 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (9) , 457-459
- https://doi.org/10.1109/55.784451
Abstract
We successfully fabricated submicron depletion-mode GaAs MOSFETs with negligible hysteresis and drift in drain current using Ga 2 O 3 (Gd 2 O 3 ) as the gate oxide. The 0.8-μm gate-length device shows a maximum drain current density of 450 mA/mm and a peak extrinsic transconductance of 130 mS/mm. A short-circuit current gain cutoff frequency (f T ) of 17 GHz and a maximum oscillation frequency (f max ) of 60 GHz were obtained from the 0.8 μm×60 μm device. The absence of drain current drift and hysteresis along with excellent characteristics in the submicron devices is a significant advance toward the manufacture of commercially useful GaAs MOSFETs.Keywords
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