Low temperature growth of single-crystalline cubic SiC on Si(111) by solid source molecular beam epitaxy
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 134 (3-4) , 167-173
- https://doi.org/10.1016/0022-0248(93)90123-e
Abstract
No abstract availableKeywords
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