In-Situ Growth of Three-Dimensionally Confined Structures on Patterned GaAs (111)B Substrates

This publication has 13 references indexed in Scilit:

• Nanofeatures on GaAs (111)B via photolithography
  Applied Physics Letters, 1992
• In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
  Applied Physics Letters, 1991
• GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
  Applied Physics Letters, 1991
• Interfacet migration and defect formation in heteroepitaxy on patterned substrates: AlGaAs and InGaAs on GaAs (100) in MBE
  Published by SPIE-Intl Soc Optical Eng ,1990
• Application of selective epitaxy to fabrication of nanometer scale wire and dot structures
  Applied Physics Letters, 1990
• Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum Confinement
  Physical Review Letters, 1989
• Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures
  Applied Physics Letters, 1988
• Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
  Physical Review Letters, 1988
• Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates
  Applied Physics Letters, 1987
• Optical spectroscopy of ultrasmall structures etched from quantum wells
  Applied Physics Letters, 1986