Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs

7 August 2002

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 23 (6) , 330-332
https://doi.org/10.1109/led.2002.1004225

Abstract

Hysteresis in room-temperature transfer characteristics between forward (pinch-off voltage, V/sub P/=-15 V) and reverse gate voltage sweeps (V/sub P/=7 V) in n-channel depletion/accumulation-mode 4H-SiC MOSFETs is reported. Transfer characteristics exhibit a parallel shift toward negative voltages depending,on the starting gate voltage and direction of the sweep. The hysteresis and shift in transfer characteristics are related to changes in effective fixed-oxide charge resulting from changes in interface trap occupancy. Interface trap occupancy changes depending on the magnitude of the starting gate voltage and the direction of gate-voltage sweep. At high temperatures, the hysteresis between forward and reverse gate voltage sweep decreases.

Keywords

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