Quantum-well Inp-Inl−xGaxPl−zAsz heterostructure lasers grown by liquid phase epitaxy (LPE)
- 1 January 1980
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 9 (1) , 1-27
- https://doi.org/10.1007/bf02655212
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interfaceApplied Physics Letters, 1979
- Phonon-sideband MO-CVD quantum-well AlxGa1−xAs-GaAs heterostructure laserApplied Physics Letters, 1979
- Bandfilling in liquid phase epitaxial InP-In1−xGaxP1−zAsz-InP quantum-well heterostructure lasersJournal of Applied Physics, 1978
- Single and multiple thin-layer (L z≲400 A) In1−xGaxP1−zAsz-InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K)Journal of Applied Physics, 1978
- Confined-carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p-n junctionApplied Physics Letters, 1977
- LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin-layer (<500 Å) active regionApplied Physics Letters, 1977
- Limitations of the direct-indirect transition on In1−xGaxP1−zAsz heterojunctionsJournal of Applied Physics, 1977
- In situ in etching technique for l.p.e. InPElectronics Letters, 1976
- Bandgap and lattice constant of GaInAsP as a function of alloy compositionJournal of Electronic Materials, 1974
- Window-Heat Sink Sandwich for Optical Experiments: Diamond (or Sapphire)-Semiconductor-Indium SandwichReview of Scientific Instruments, 1971