Direct observation of the composition of A and B {111} faces of GaP by using x-ray photoemission

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Abstract
X‐ray photoemission from Ga 2p3/2 electrons was used to investigate the two polar {111} faces of a polished, single‐crystal GaP wafer. It is shown directly by examining, for the first time, the contributions to the photoemission from electrons involved in Ga–Ga, Ga–P, and Ga–O bonds, that one of these faces consists solely of Ga atoms and the reverse face solely of P atoms. The same experiments on both faces of a similar {100} wafer showed that both {100} faces are the same.