RF, Analog and Mixed Signal Technologies for Communication ICs - An ITRS Perspective
- 1 October 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Abstract
The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon and III-V compound semiconductors. This paper discussed the roadmap and the figures of merit (FoM) used to characterize both active and passive devices critical for typical radio front end designs. The trends, challenges and potential solutions was reviewed and address the intersection of silicon and III-V compound semiconductorsKeywords
This publication has 17 references indexed in Scilit:
- A silicon 60GHz receiver and transmitter chipset for broadband communicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- A Fully Integrated SoC for GSM/GPRS in 0.13/spl mu/m CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Usage of HBTs beyond BV/sub cec/Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A low-noise amplifier at 77 GHz in SiGe:C bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- SiGe technology requirements for millimeter-wave applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Silicon-germanium BiCMOS HBT technology for wireless power amplifier applicationsIEEE Journal of Solid-State Circuits, 2004
- Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHzIEEE Journal of Solid-State Circuits, 2004
- A comparison of bipolar technologies for linear handset power amplifier applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipationIEEE Electron Device Letters, 2002
- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002