Dynamic performance and leakage current characteristics of 1/4-micron-gate ultra-thin CMOS/SIMOX gate array
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 665-668
- https://doi.org/10.1109/iedm.1994.383322
Abstract
Dynamic performance and leakage current characteristics of fully-depleted quarter-micron-gate CMOS/SIMOX devices are examined using a new test structure built on a 1.4-/spl mu/m-pitch gate array. High speed and low power characteristics of various loaded CMOS/SIMOX logic gates have been verified with the test structure. Furthermore, we have found that the NMOS subthreshold leakage current due to the parasitic bipolar action varies with the off-state period of input pulses during switching operation.<>Keywords
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