A novel 14 V programmable 4 kbit MOS PROM using a poly-Si resistor applicable to on-chip programmable devices
- 1 February 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (1) , 62-68
- https://doi.org/10.1109/jssc.1982.1051687
Abstract
No abstract availableKeywords
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