Effect of Oxygen Implantation Conditions on Buried Si0₂ Layer Formation using a Multiple Step Process

This publication has 11 references indexed in Scilit:

• Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two steps
  Applied Physics Letters, 1989
• The role of implantation temperature and dose in the control of the microstructure of SIMOX structures
  Microelectronic Engineering, 1988
• The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealing
  Journal of Applied Physics, 1988
• Low-Defect, High-Quality Simox Produced By Multiple Oxygen Implantation with Substoichiometric Total Dose
  MRS Proceedings, 1988
• Dislocation Reduction on Simox Substrates by Using Multiple Implants
  MRS Proceedings, 1987
• Ion beam synthesis of thin buried layers of SiO2 in silicon
  Vacuum, 1986
• The Role of Implant Temperature in the Formation of Thin Buried Oxide Layers
  MRS Proceedings, 1986
• Silicon on Insulator Formed By O⁺ OR N⁺ Ion Implantation
  MRS Proceedings, 1985
• On The Formation of Si Oxide by Ion Implantation
  MRS Proceedings, 1985
• A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation
  MRS Proceedings, 1983