Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 123-124, 395-399
- https://doi.org/10.1016/s0169-4332(97)00490-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSbJournal of Applied Physics, 1996
- Recombination lifetime in InAs–Ga1−xInxSb superlatticesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Electronic band structure of far-infrared Ga1-xInxSb/InAs superlatticesSemiconductor Science and Technology, 1993
- Determination of band gap and effective masses in InAs/Ga1−xInxSb superlatticesApplied Physics Letters, 1992
- High structural quality Ga1−xInxSb/InAs strained-layer superlattices grown on GaSb substratesJournal of Applied Physics, 1992
- Far-infrared photoresponse of the InAs/GaInSb superlatticeApplied Physics Letters, 1991
- Infrared optical characterization of InAs/Ga1−xInxSb superlatticesApplied Physics Letters, 1990
- InAs/Ga1−xInxSb strained-layer superlattices grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Long-wavelength infrared detectors based on strained InAs–Ga1−xInxSb type-II superlatticesJournal of Vacuum Science & Technology A, 1989
- Proposal for strained type II superlattice infrared detectorsJournal of Applied Physics, 1987