A Model for the Staebler-Wronski Effect Based on Charged Impurities
- 1 April 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (4A) , L244-246
- https://doi.org/10.1143/jjap.24.l244
Abstract
We propose a model for photo-induced changes for Si-based amorphous semiconductors, in which the distance between the impurity atom and the Si atom changes according to charge state.Keywords
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