Electronic transport in molecular-beam-epitaxy-grown ${Al}_{x}$ ${Ga}_{1 - x}$ As

Publisher Website

15 June 1986

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 33 (12) , 8564-8567
https://doi.org/10.1103/physrevb.33.8564

Abstract

We have studied magnetotransport and cyclotron resonance of electrons in interfacial subbands of a series of remote-doped

{Al}_{0.35}

{Ga}_{0.65}

As-

{Al}_{x}

Ga

{}_{1 - x}

As heterostructures with x up to 0.26. The experiments allow an accurate determination of

m_{c}^{*}

(x) and define an upper limit of the strength of the alloy disorder scattering.

Keywords

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