Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFETs (MESFETs read MOSFETs)
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (5) , 234-236
- https://doi.org/10.1109/55.215178
Abstract
A hybrid mode of device operation, in which both bipolar and MOSFET currents flow simultaneously, has been experimentally investigated using quarter-micrometer-channel-length MOSFET's which were fabricated on SIMOX silicon-on-insulator substrates. This mode of device operation is achieved by connecting the gate of a non-fully-depleted SOI MOSFET to the edges of its floating body. Both the maximum G/sub m/ and current drive at 1.5* higher than the MOSFET's normal mode. Bipolar-junction-transistor (BJT)-like 60-mV/decade turn-off behavior is also achieved. This mode of operation is very promising for low-voltage, low-power, very-high-speed logic as well as for on-chip analog functions.<>Keywords
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