InGaAsP/InP buried-heterostructure lasers (λ = 1.5 μm) with chemically etched mirrors
- 1 September 1981
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5843-5845
- https://doi.org/10.1063/1.329480
Abstract
Buried-heterostructure InGaAsP/InP lasers with chemically etched mirrors are fabricated successfully. The lasers emit light at ∼1.5 μm. The threshold current of these lasers is nearly the same as that of conventionally fabricated cleaved-mirror lasers. This fabrication procedure enables us to obtain low-threshold-current devices and allows a much wide variety of device design and fabrication compared with the conventional cleaving technique.This publication has 13 references indexed in Scilit:
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