Characterization of Doped Si-TiSi2Bilayers Formed by Ion Beam Mixing and Rapid Thermal Annealing
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Modeling Rapid Thermal Diffusion of Arsenic and Boron in SiliconJournal of the Electrochemical Society, 1984
- Titanium silicide formation: Effect of oxygen distribution in the metal filmJournal of Applied Physics, 1984
- Erbium silicide formation using a line-source electron beamApplied Physics Letters, 1984
- Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formationPhysical Review B, 1984
- Rapid Thermal Annealing in SiMRS Proceedings, 1984
- Growth of titanium silicide on ion-implanted siliconJournal of Applied Physics, 1983
- A Self-Aligned Mo-Silicide FormationJapanese Journal of Applied Physics, 1983
- Processing of titanium films on silicon using a multiscanned electron beamElectronics Letters, 1982