Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (8) , 1556-1558
- https://doi.org/10.1109/16.223722
Abstract
Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on naturally occurring semiconductingKeywords
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