Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes
- 1 August 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (3) , 1196-1203
- https://doi.org/10.1063/1.368185
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiCElectronics Letters, 1997
- Optical confinement and threshold currents in III–V nitride heterostructures: SimulationJournal of Applied Physics, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetimeApplied Physics Letters, 1997
- Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVDMRS Internet Journal of Nitride Semiconductor Research, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Refractive indices of wurtzite and zincblende GaNElectronics Letters, 1993
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986