Changes in composition and deposition rates in the reactive sputtering of copper, titanium, and yttrium exposed to oxygen
- 24 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (17) , 1664-1665
- https://doi.org/10.1063/1.101299
Abstract
Copper, titanium, and yttrium oxide films were prepared by reactive dc magnetron sputtering in an Ar-O2 plasma and the deposition rates and compositional changes were measured as a function of dc power. The deposition rates of Cu increased monotonically with increasing dc power, while those of Ti and Y increased abruptly by more than one order of magnitude at a critical dc power (Pc). Abrupt compositional changes of metal and oxygen in the thin films were also observed for Ti and Y at Pc. The compositional change curve for Cu had a plateau in dc power dependence. These results correlate with the differences of heat of oxide formation among Cu, Ti, and Y.Keywords
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