Realization and optical characterization of etched mirror facets in GaN cavities
- 23 February 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (8) , 960-962
- https://doi.org/10.1063/1.120934
Abstract
We report on the realization of etched mirror facets in GaN cavities by chemically assisted ion-beam etching. The etching conditions are adjusted to obtain a high degree of verticality and smoothness. Optical pumping experiments and gain measurements are performed in etched GaN cavities of various geometries. Stimulated emission and lasing are observed. The study of the value of the gain at threshold as a function of the cavity length allows a determination of the reflection coefficient of the etched mirror. The measured value of 15% is in good agreement with the one expected for a perfect air–GaN interface. This demonstrates the high quality of the etched mirror facets.Keywords
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