Improved shallow p+ diffusion into InGaAsP by a new spin-on diffusion source

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Abstract
Shallow p+ diffusion into InGaAsP (λ=1.3 μm) has been improved by employing a new spin‐on source based on Zn‐doped alumina. Thereby the thermal expansion coefficients of diffusion source and semiconductor are better matched together than in case of the more common Zn‐doped silica films. Consequently, besides an excellent mechanical stability of the spin‐on films over a wide temperature range, the influence of mechanical stress on the diffusion process is effectively reduced. Applying diffusion temperatures around 600 °C surface hole concentrations above 6×1019 cm−3 and extremely low specific p‐contact resistances of 2–3×10−6 Ω cm2 have been achieved.