Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 2572-2578
- https://doi.org/10.1109/23.556838
Abstract
Modeling of the field and thermal dependencies of radiation-induced charge annealing, based on the assumption that the energy level of defects in the oxide is located within the Si forbidden gap, is described and verified. A novel concept of the thermoactivated nature of tunneling exchange between the defects and the Si substrate is proposed.Keywords
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