Correlation between two time-dependent dielectric breakdown measurements for the gate oxides damaged by plasma processing
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (1) , 160-164
- https://doi.org/10.1109/16.658825
Abstract
No abstract availableKeywords
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