Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance
- 1 September 1999
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 434 (1) , 44-56
- https://doi.org/10.1016/s0168-9002(99)00431-3
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Assessment of SI GaAs particle detectorsMaterials Science and Engineering: B, 1997
- Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectorsJournal of Applied Physics, 1994
- Electrostatic and current transport properties of n+/semi-insulating GaAs junctionsJournal of Applied Physics, 1993
- Studies of Charge Collection in GaAs Radiation DetectorsMRS Proceedings, 1993
- Minority carrier capture cross section of the EL2 defect in GaAsApplied Physics Letters, 1992
- Transient photoconductivity measurements in semi-insulating GaAs. I. An analog approachJournal of Applied Physics, 1987
- Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep‐Level Centers in GaAsPhysica Status Solidi (b), 1983
- AsGa antisite defects in GaAsPhysica B+C, 1983
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- FIELD-ENHANCED EMISSION AND CONSTANT-FIELD DOMAINS IN SEMICONDUCTORS WITH DEEP TRAPSApplied Physics Letters, 1969