Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon
- 1 February 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (2) , 83-87
- https://doi.org/10.1088/0268-1242/2/2/003
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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