Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 665-668
- https://doi.org/10.1016/s0022-0248(96)00572-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Facet evolution of CCl4-doped multilayers during metalorganic chemical vapor deposition on patterned GaAs substratesJournal of Crystal Growth, 1995
- The fabrication of quantum wire structures through application of CCl4 towards lateral growth rate control of GaAs on patterned GaAs substratesApplied Physics Letters, 1995
- Growth behavior on V-grooved high Miller index GaAs substrates by metalorganic chemical vapor depositionJournal of Crystal Growth, 1995
- Carbon doping characteristics of GaAs and Al0.3Ga0.7As grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4Journal of Crystal Growth, 1994
- The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substratesJournal of Crystal Growth, 1994
- The use of chloride based precursors in metalorganic vapor phase epitaxyJournal of Crystal Growth, 1991
- Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p-type GaAsApplied Physics Letters, 1991
- Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substratesIEEE Journal of Quantum Electronics, 1989
- Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasersJournal of Crystal Growth, 1988
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986