Facet evolution of CCl4-doped multilayers during metalorganic chemical vapor deposition on patterned GaAs substrates
- 1 November 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 156 (3) , 169-176
- https://doi.org/10.1016/0022-0248(95)00210-3
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substratesJournal of Crystal Growth, 1994
- Selective regrowth of III–V epitaxial layers by low pressure organometallic vapor phase epitaxy using CCl4Journal of Vacuum Science & Technology A, 1993
- A submilliampere-threshold multiquantum-well AlGaAs laser without facet coating using single-step MOCVDIEEE Journal of Quantum Electronics, 1992
- The use of chloride based precursors in metalorganic vapor phase epitaxyJournal of Crystal Growth, 1991
- Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substratesIEEE Journal of Quantum Electronics, 1989
- Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachlorideApplied Physics Letters, 1989
- Growth behavior during nonplanar metalorganic vapor phase epitaxyJournal of Applied Physics, 1988
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- Kinetic aspects in the vapour phase epitaxy of III–V compoundsJournal of Crystal Growth, 1975