Ultrahigh-speed HEMT LSI technology for supercomputer
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 26 (10) , 1337-1344
- https://doi.org/10.1109/4.90083
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Noise Perfomance of Microwave HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Recent progress in MOVPE for HEMT LSIsJournal of Crystal Growth, 1990
- Se-doped AlGaAs/GaAs HEMTs for stable low-temperature operationIEEE Electron Device Letters, 1990
- A gigahertz cryogenic HEMT pseudorandom number generator chip setPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- MBE as a production technology for HEMT LSIsJournal of Crystal Growth, 1989
- A Hemt Lsi For A Multibit Data RegisterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- Growth of highly uniform epitaxial layers over multiple substrates by molecular beam epitaxyJournal of Crystal Growth, 1987
- HEMT technology: Potential and advancesSurface Science, 1986
- AlGaAs/GaAs 2-DEG FET's fabricated from MO-CVD WafersIEEE Electron Device Letters, 1985
- GaAs VLSI Technology for High-Speed ComputersPublished by Elsevier ,1985