Growth temperature dependence of AlGaAs spontaneous vertical quantum wells on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy
- 1 January 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 158 (3) , 205-209
- https://doi.org/10.1016/0022-0248(95)00449-1
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Growth of GaAs/AlAs trench-buried multiple quantum wires by metalorganic chemical vapor deposition on V-grooved substratesApplied Physics Letters, 1994
- The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substratesJournal of Crystal Growth, 1994
- A confocal photoluminescence study of metalorganic chemical vapor deposition growth on patterned GaAs substratesJournal of Applied Physics, 1994
- InGaAs/GaAs strained quantum wire lasers grown by organometallic chemical vapor deposition on nonplanar substratesApplied Physics Letters, 1993
- Vertically stacked multiple-quantum-wire semiconductor diode lasersApplied Physics Letters, 1991
- Stimulated emission in semiconductor quantum wire heterostructuresPhysical Review Letters, 1989
- Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrateApplied Physics Letters, 1989
- Patterned quantum well semiconductor injection laser grown by molecular beam epitaxyApplied Physics Letters, 1988
- Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasersJournal of Crystal Growth, 1988
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986