double-heterostructure bipolar transistors for high-speed ICs and OEICs

This publication has 12 references indexed in Scilit:

• Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1994
• A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process
  Journal of Lightwave Technology, 1994
• High-performance Zn-doped-base InP/InGaAs double-heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy
  Applied Physics Letters, 1994
• High-frequency InP/InGaAs double heterojunction bipolar transistors on Si substrate
  IEEE Electron Device Letters, 1993
• InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector
  Electronics Letters, 1993
• InGaAs/InP composite collector heterostructure bipolar transistors
  Electronics Letters, 1992
• InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1991
• A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material
  IEEE Photonics Technology Letters, 1991
• An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver
  IEEE Photonics Technology Letters, 1990
• A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure
  IEEE Transactions on Electron Devices, 1988