An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (7) , 505-506
- https://doi.org/10.1109/68.56639
Abstract
A monolithically integrated 1-Gb/s p-i-n/HBT transimpedance photoreceiver is discussed. The optoelectronic integrated circuit (OEIC) was made from metalorganic vapor-phase epitaxy (MOVPE)-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Omega , a sensitivity of -26.1 dBm, >25-dB dynamic range, and a 500-MHz bandwidth.<>Keywords
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