Free-carrier absorption from electrons in confined systems
- 15 January 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (2) , 619-626
- https://doi.org/10.1063/1.336621
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Reactive molecular beam epitaxyCritical Reviews in Solid State and Materials Sciences, 1983
- MOVPE Growth of Ga1-xAlxAs–GaAs Quantum Well HeterostructuresJapanese Journal of Applied Physics, 1982
- Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Hydrogenic impurity states in a quantum well: A simple modelPhysical Review B, 1981
- Model calculation of the optical properties of semiconductor quantum wellsPhysical Review B, 1981
- Electronic Properties of a Semiconductor Superlattice. I. Self-Consistent Calculation of Subband Structure and Optical SpectraJournal of the Physics Society Japan, 1979
- Semiconductor superfine structures by computer-controlled molecular beam epitaxyThin Solid Films, 1976
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974