Annealing of nitrogen-implanted GaAs1−xPx by a swept line electron beam

Abstract
Photoluminescence studies and emission profiling are used to evaluate the effectiveness of swept (as opposed to rastered) electron beams in activating ion implanted nitrogen in GaAs1−xPx . Both direct‐ and indirect‐gap compositions are studied as a function of nitrogen concentration and electron beam intensity. We find this annealing method produces comparable or superior nitrogen activation as compared with furnace annealed material, with reduced implantation‐induced damage diffusion. This is the first use of a swept line electron beam for annealing, a method which offers advantages over raster‐scanned focused lasers or electron beams.