Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission
- 15 September 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (6) , 3304-3306
- https://doi.org/10.1063/1.341506
Abstract
Internal photoemission has been used to determine the valence- and conduction-band discontinuities (ΔEv and ΔEc) in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions. The method is straightforward, accurate, and assumes a minimum of unknown parameters. We have found ΔEv =(0.43±0.05) eV and ΔEc =(0.34±0.05) eV for GaAs/a-Ge and ΔEv =(0.88±0.05) eV and ΔEc =(0.68±0.05) eV for GaP/a-Ge.This publication has 11 references indexed in Scilit:
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