MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving voltages fabricated by selective-area MOCVD
- 1 June 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 8 (6) , 797-799
- https://doi.org/10.1109/68.502098
Abstract
Summary form only given. Recently, lasers with monolithically integrated external modulators fabricated using selective-area epitaxy in the InGaAs-InGaAsP material system have received much attention for applications in long distance fiber communication. As of yet little work has been done on lasers with monolithically integrated modulators in the InGaAs-GaAs material system. Applications for lasers with monolithically integrated external-cavity modulators in the InGaAs-GaAs material system include wavelength-division multiplexing (WDM) local area networks and differential absorption LIDAR systems, for both of which low chirp is desired. We present a multiple quantum well (MQW) wavelength-tunable distributed Bragg reflector (DBR) laser with monolithically integrated external-cavity electroabsorption (EA) modulator.Keywords
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