InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (1) , 78-80
- https://doi.org/10.1109/68.475784
Abstract
The design and operation of strained-layer InGaAs-GaAs lasers with monolithically integrated intracavity electroabsorption modulators fabricated by selective-area epitaxy are presented. Devices with modulator lengths of 290, 620, and 1020 /spl mu/m have cw threshold currents of 9, 7.5, and 7.5 mA, respectively, at a modulator bias of 0 V. These devices also exhibit extinction ratios of 16.5, 19.5, and 20.5 dB, respectively, at a modulator bias of 2 V.Keywords
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