Light-induced changes of phosphorus bonding configurations in hydrogenated amorphous silicon
- 15 September 1987
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (8) , 4525-4527
- https://doi.org/10.1103/physrevb.36.4525
Abstract
We report the direct observation of a metastable substitutional phosphorus state in hydrogenated amorphous silicon by nuclear-magnetic-resonance spectroscopy. The fourfold site is identified from the spectra's characteristic chemical shift. The substitutional site is removed by "light-soaking" the film and created by low-temperature annealing. Phosphorus relaxation-time measurements indicate Raman processes dominate the spin-lattice relaxation of the phosphorus nuclei.Keywords
This publication has 9 references indexed in Scilit:
- Thermal equilibration in doped amorphous siliconPhysical Review B, 1986
- The doping efficiency in amorphous silicon and germaniumPhilosophical Magazine Part B, 1986
- Localized states in doped amorphous siliconJournal of Non-Crystalline Solids, 1985
- Dopant and defect states in a-Si:HPhilosophical Magazine Part B, 1985
- Local bonding configuration of phosphorus in doped and compensated amorphous hydrogenated siliconPhysical Review B, 1983
- Defect states in doped and compensated-Si: HPhysical Review B, 1981
- NMR studies of amorphous phosphorousSolid State Communications, 1979
- Coordination of Arsenic Impurities in Amorphous Silicon-Hydrogen AlloysPhysical Review Letters, 1977
- Substitutional doping of amorphous siliconSolid State Communications, 1975