TiNxOy as a barrier between Cr-Si-(O) and aluminium thin films
- 1 May 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 200 (1) , 93-116
- https://doi.org/10.1016/0040-6090(91)90033-t
Abstract
No abstract availableThis publication has 51 references indexed in Scilit:
- Characterization of the interface between Al–1% Si and rapidly annealed Mo–polycideJournal of Vacuum Science & Technology A, 1986
- Effect of Cu on the Kinetics and Microstructure of Al3Ti FormationJournal of the Electrochemical Society, 1985
- Dopant redistribution in silicides: Materials and process issuesJournal of Vacuum Science & Technology B, 1984
- Influence of slight deviations from TaSi2 stoichiometry on the high-temperature stability of tantalum silicide/silicon contactsJournal of Vacuum Science & Technology B, 1984
- TiSi2/TiN–A Stable Multilayered Contact Structure for Shallow Implanted Junctions in VLSI TechnologyPhysica Scripta, 1983
- The properties of Cr–Si–O thin film resistors by dc conventional sputteringJournal of Vacuum Science & Technology A, 1983
- The effect of oxygen and substrate temperature on the growth of Ti thin films on stainless-steel substratesJournal of Vacuum Science & Technology A, 1983
- A Study of Ti as a Diffusion Barrier Between PtSi or Pd2Si and AlPhysica Scripta, 1981
- Backscattering analysis of the successive layer structures of titanium silicidesThin Solid Films, 1979
- Study of Al/Pd2Si contacts on SiJournal of Vacuum Science and Technology, 1977