Reliability of planar InGaAs/InP photodiodes passivated with boro-phospho-silicate glass
- 1 January 1988
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (1) , 250-252
- https://doi.org/10.1063/1.340454
Abstract
Planar InP/In0.53Ga0.47As photodiodes with boro‐phospho‐silicate glass (BPSG) layers as a Zn‐diffusion mask and as an InP surface p‐n junction passivant exhibit stable, reverse‐bias leakage‐current characteristics at 220 °C for more than 104 h. Based on these results, estimates of the time required for the leakage current at 70 °C to saturate at 10 nA is, in the worst case considered, about 33 years. As a passivant and diffusion mask, BPSG compares favorably with silicon nitride.This publication has 9 references indexed in Scilit:
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