Influence of Si and S doping on structural defects in LEC-grown gallium arsenide
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3) , 271-279
- https://doi.org/10.1016/0022-0248(86)90448-3
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Low-dislocation indium-alloyed GaAsJournal of Crystal Growth, 1984
- Low dislocation, semi-insulating In-doped GaAs crystalsJournal of Crystal Growth, 1984
- Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski MethodJournal of the Electrochemical Society, 1984
- Dislocation-free silicon-doped gallium arsenide grown by LEC procedureJournal of Crystal Growth, 1983
- Dislocation-free GaAs and InP crystals by isoelectronic dopingJournal of Crystal Growth, 1983
- EPD investigation in LEC‐grown silicon‐doped gallium arsenideCrystal Research and Technology, 1983
- Effect of doping on formation of dislocation structure in semiconductor crystalsJournal of Crystal Growth, 1981
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Creation of defects during the growth of semiconductor single crystals and filmsJournal of Crystal Growth, 1978
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978