Low pressure MOVPE growth of Si-doped Ga0.5In0.5P using Si2H6
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 618-623
- https://doi.org/10.1016/0022-0248(88)90593-3
Abstract
No abstract availableKeywords
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