Reliability of InP-based HBT's and HEMT's: experiments, failure mechanisms, and statistics
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed basePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Stability of beryllium-doped compositionally graded and abrupt AlInAs/GaInAs heterojunction bipolar transistorsApplied Physics Letters, 1993
- Reliability of AlInAs/GaInAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1993
- Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layerJournal of Applied Physics, 1991
- Superlattice gate and graded superlattice buffer for microwave power metal–semiconductor field effect transistor grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1989
- Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structuresApplied Physics Letters, 1989
- AlInAs-GaInAs HEMT for microwave and millimeter-wave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989
- The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performanceJournal of Vacuum Science & Technology B, 1988
- High-performance submicrometer AlInAs-GaInAs HEMT'sIEEE Electron Device Letters, 1988
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984