Characterization of epitaxial silicon layers made by reduced pressure/temperature CVD
- 1 January 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 36 (1-4) , 673-680
- https://doi.org/10.1016/0169-4332(89)90964-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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