1.3 µm InAsP/InAlGaAs MQW lasers for high-temperatureoperation
- 5 June 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (12) , 1048-1049
- https://doi.org/10.1049/el:19970671
Abstract
InAsP/InAlGaAs strained multiquantum-well (MQW) 1.3 µm lasers with a large conduction band discontinuity are proposed and demonstrated for the first time. An InAsP/InAlGaAs MQW layer with high structural and optical quality was obtained by gas-source molecular beam epitaxy growth combined with post-growth 650°C rapid thermal annealing. The lasers exhibited a low threshold current density of 1.1 kA/cm2 with an excellent characteristic temperature as high as 116 K.Keywords
This publication has 5 references indexed in Scilit:
- High temperature characteristic T 0 and low threshold current density of1.3 µm InAsP/InGaP/InP compensated strain multiquantum wellstructure lasersElectronics Letters, 1995
- 1.3 μm InAsP compressively strained multiple-quantum-well lasers for high-temperature operationJournal of Applied Physics, 1995
- High-power and high-efficiency1.3 µm InAsP compressively-strained MQW lasersat high temperaturesElectronics Letters, 1995
- Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wellsJournal of Electronic Materials, 1991
- Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealingApplied Physics Letters, 1991